Huixia Fu

Phone: +86-19123121340

Email: hxfu@cqu.edu.cn

Scholar Homepage: https://scholar.google.com/citations?user=TUAAzuwAAAAJ&hl=zh-CN

Homepage: http://iais.cqu.edu.cn/info/1092/2063.htm

Academic Background

• Sep.2012-Jul.2017 Ph.D., Institute of Physics, Chinese Academy of Sciences, China

• Sep.2008-Jul.2012 B.S., Department of Physics, Lanzhou University, China

Work Experience

• Sep.2020-Present Associate Professor, Chongqing University, China

• Jul.2017-Aug.2020 Postdoc, Weizmann Institute of Science, Israel

Research Interests

• (1) First-principles calculations,Density functional theory

• (2) Topological states and topological materials, Quantum materials

• (3) Two-dimensional materials

Selective Publications

• H. X. Fu, C.-X. Liu, B. Yan.Exchange Bias and Quantum Anomalous Hall Effect in the MnBi2Te4-CrI3 Heterostructure.Sci. Adv.6(10), eaaz0948, 2020.

• S. Xu#,H. X. Fu#,Y. Tian, T. Deng, J. Cai, J. Wu, T. Tu, T. Li, C. Tan, Y. Liang, C. Zhang, Z. Liu, Z. Liu, Y. Chen, Y. Jiang, B. Yan, H. Peng.Exploiting Two-Dimensional Bi2O2Se for Trace Oxygen Detection.Angew. Chem. Int. Ed.10.1002/anie.202006745, 2020.

• C. Guo#, X. Meng#,H. X. Fu#, Q. Wang#, H. Wang, Y. Tian, J. Peng, R. Ma, Y. Weng, S. Meng, E. Wang, Y. Jiang.Probing nonequilibrium dynamics of photoexcited polarons on a metal-oxide surface with atomic precision.Phys. Rev. Lett.124, 206801, 2020(Editors' Suggestion).

• H. X. Fu, J. Wu, H. Peng, and B. Yan.Self-modulation doping effect in the high-mobility layered semiconductor Bi2O2Se.Phys. Rev. B97,241203, 2018 (Rapid Communication).

• Y. Yu#,H. X. Fu#, L. She, S. Lu, Q. Guo, H. Li, S. Meng, G. Cao.Fe on Sb(111): Potential Two-Dimensional Ferromagnetic Superstructures.ACS nano11, 2143, 2017.

• H. X. Fu, Z. Liu, C. Lian, J. Zhang, H. Li, J.-T. Sun, S. Meng.Magnetic Dirac Fermions and Chern Insulator Supported on Pristine Silicon Surface.Phys. Rev. B94, 035427,2016.

• H. X. Fu, J. Ren, L. Chen, C. Si, J. Qiu, W. Li, J. Zhang, H. Li, K. Wu, W. Duan, S. Meng.Prediction of Silicon-based Room Temperature Quantum Spin Hall Insulator via Orbital Mixing.Europhys. Lett.113, 67003, 2016.

• H. X. Fu, L. Chen, J. Chen, J. Qiu, Z. Ding, J. Zhang, K.Wu, H. Li, S. Meng.Multilayered Silicene: The Bottom-Up Approach for a Weakly Relaxed Si(111) with Dirac Surface States.Nanoscale7, 15880, 2015.

• H. X. Fu, J. Zhang, Z. Ding, H. Li, and S. Meng.Stacking-dependent electronic structure of bilayer silicene.Appl. Phys. Lett.104, 131904, 2014