Associate Professors

Youpin Gong

——  Associate Professor, Graduate Tutor

Release time: Thu, Mar 25 2021 21:27

Phone: 18626180818

Office address: LE504 Science Building

Email: gongyp@cqu.edu.cn

Homepage: http://iais.cqu.edu.cn/info/1092/2098.htm


Academic Background

  • 2007.09-2010.07, Ph.D., Nanjing University

  • 2004.09-2007.07, M.S., Anhui University of Technology

  • 2000.09-2004.07, B.S., Anhui University of Technology


Work Experience

  • 2020.07-Present, Chongqing University, Associate Professor, Graduate Tutor

  • 2017.05-2020.07, Southern University of Science and Technology, Research Associate Professor, Graduate Tutor

  • 2015.08-2017.05, Soochow University, Associate Professor

  • 2014.04-2015.06, University of Kansas, Postdoctoral Researcher

  • 2010.07-2014.04, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Science, Postdoctoral Researcher/Research Associate


Fundings

  • 2013. 01-2015.12 国家自然科学基金-青年基金(编号11204348),主持。

  • 2012-2014 江苏省博士后基金(编号1101051C),主持。

  • 2018.01-2020.12 深圳市战略新兴产业发展专项资金-基础研究(学科布局)(编号JCYJ20170817110751776),第二负责人。


Research Interests

  • My research interests includenanohybrid photodetectors, two-dimensional material synthesis, andnanophotonic devices.


Honors Awards

  • 2018, Shenzhen Nanshan District Pilot Talent Award;

  • 2017, Recipient ofthe Shenzhen of"Peacock plan Award-C";

  • 2014, SuzhouExcellent PapersofNatural Science Award-2nd Class.


Selective Publications

  • T. L. Qi#,Y. P. Gong#*,A. L. Li, X. M. Ma, P. P. Wang, R. Huang, C.Liu,R.Sakidja, J. Z. Wu,L. R. Chen*,Y. Zhang*. Interlayertransition in a vdWheterostructure towardultrahighdetectivityshortwaveinfraredphotodetectors.AdvancedFunctional Materials30,1905687(2020).(JCR=Q1,IF=16.836,被引用8次)#Contributed equally to the work.

  • A. L. Li, Q. X. Chen, P. P. Wang, Y. Gan, T. L. Qi, P. Wang, F. D. Tang, J. Z. Wu, R. Chen*, L. Y. Zhang*,Y. P. Gong*.Ultrahigh-sensitive broadband photodetectors based on dielectric shielded MoTe2/Graphene/SnS2p-g-n junctions.Advanced Materials31, 1805656 (2019).(JCR=Q1,IF=27.398,被引用52次)(Frontpiecearticle)

  • Y. P. Gong*,P. Adhikari, Q. F. Liu, T. Wang, M. G. Gong, W.-L. Chan, W.-Y. Ching, J. Wu*.Designing interface of carbon nanotube/biomaterials for high-performance ultra-broadband photodetection.ACS Applied Materials & Interfaces9, 11016 (2017). (JCR=Q1,IF=8.785)

  • Y. P. Gong*,Q. F. Liu, M. G. Gong, T. Wang, G. G. Zeng, W.-L. Chan, J. Wu*. High-performance photodetectors based on effective exciton dissociation in protein-adsorbed multi-walled carbon nanotube nanohybrids.Advanced Optical Materials5,1600478(2017).(JCR=Q1,IF=8.286) (Inside Front Cover)

  • Y. P. Gong*, Q. F. Liu, J. S. Wilt, M. G. Gong, S. Ren, J. Wu*. Wrapping cytochrome c around single-wall carbon nanotube: engineered nanohybrid building blocks for infrared detection at high quantum efficiency.Scientific Reports5, 11328 (2015).(JCR=Q1,IF=3.998)

  • C. R. Ma#,Y. P. Gong#, R. T. Lu, E. Brown, B. H. Ma, J. Li, J. Wu*. Detangling extrinsic and intrinsic hysteresis for detecting dynamic switch of electric dipoles using graphene field-effect transistors on ferroelectric gates.Nanoscale7,18489 (2015). (JCR=Q1,IF=6.895)(Back cover)#Contributed equally to the work.

  • M. S. Long#,Y. P. Gong#, X. F. Wei, C. Zhu, J. B. Xu, P. Liu,Y. F. Guo, W. W. Li, G. T. Liu, L. W. Liu*. Electron-electron interaction, weak localization and spin valve effect in vertical-transport graphene devices.Applied Physics Letters104, 153114 (2014).(JCR=Q1,IF=3.597)#Contributed equally to the work.

  • Y. P. Gong,H. F.Zhai, X. J.Liu, J. Z.Kong, D.Wu, A. D.Li*. Impact of Gd2O3passivation layer on interfacial and electrical properties of atomic-layer-deposited ZrO2gate dielectric on GaAs.Applied Surface Science291,35 (2014). (JCR=Q1,IF=6.182)

  • Y. P. Gong, M. S. Long, G. T. Liu, S. Gao, C. Zhu, X. F. Wei, X. M. Geng, M. T. Sun, C. L. Yang, L. Lu*, L. W. Liu*.Electronic transport properties of graphene nanoribbon arrays fabricated by unzipping aligned nanotubes.Physical Review B87, 165404 (2013).(JCR=Q1,IF=3.575)

  • Y. P. Gong,X. M. Zhang, G. T. Liu, L. Q. Wu, X. M. Geng, M. S. Long, X. H. Cao, Y. F. Guo, W. W. Li, J. B. Xu, M. T. Sun, L. Lu, L. W. Liu*. Layer-controlled and wafer-scale synthesis of uniform and high-quality graphene films on polycrystalline nickel catalyst.Advanced Functional Materials22, 3153 (2012). (JCR=Q1,IF=16.836,被引用89次)

  • Y. P. Gong, A. D. Li*, X. J. Liu, H. Li, D. Wu.Effect of surface treatments on interfacial characteristics and band alignments of atomic-layer-deposited Al2O3films on GaAs substrates.Surface and Interface Analysis43, 734 (2011).(JCR=Q2,IF=1.665)

  • Y. P. Gong,A. D. Li*, C. Zhao, Y. D. Xia, D. Wu. Fabrication and electrical characteristics of ultrathin (HfO2)x(SiO2)1-xfilms by surface sol-gel method and reaction-anneal treatment.Microelectronic Engineering87, 1756 (2010).(JCR=Q2,IF=2.305)

  • Y. P. Gong, A. D. Li*, X. F. Li, H. Li, H. F. Zhai, D.Wu.Impact of Al/Hf ratio on electrical properties and band alignments ofatomic-layer-depositedHfO2/Al2O3on S-passivated GaAs substrates.Semiconductor Science and Technology25, 055012(2010).(JCR=Q1,IF=2.361)

  • Y. P. Gong, A. D. Li*, X. Qian, C. Zhao, D. Wu. Interfacial structure and electrical properties of ultrathin HfO2dielectric films on Si substrates by surface sol-gel method.Journal of Physics D: Applied Physics42, 015405 (2009). (JCR=Q1,IF=3.169)


Patents

  • J. Wu,Y.P.Gong, Q.F.Liu (equal distribution). Biomolecule-Carbon Nanostructrure Nanocomposites for Optoelectronic Devices (US patent number 10,224,499 B2).

  • Y.P.Gong, A.D.Li, X.Qian, D.Wu,N.B.Min.Asoft chemicalmethodforfabricatingultra-thin HfO2or ZrO2gate dielectric films (in Chinese,patent number:ZL200810123679.8).

  • Y.P.Gong, A.D.Li, X.J.Liu, D. Wu.Atomic-layer-depositedHfO2/Al2O3nanolaminatetune thebandalignmentsbetween gate dielectric andGaAs(in Chinese,patent number:ZL200910233409.7).

  • L.W. Liu,Y.P.Gong,M.S.Long,S. Gao,C.Zhu,X.M.Geng.A method formaking alignedgraphenenanoribbon arrays(in Chinese,patent number:ZL201210284501.8).

  • A.D.Li,Y.P.Gong,X.J.Liu, Di Wu.A methodfor making theGaAs-based MOS device(in Chinese,patent number:ZL201010530165.1).